Work

HfOx seed-layer functionalization of MoS2 for top-gated HZO FeFETs

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0350349

Authors: Evgeny N. Korobkin, Kira S. Kolinko, Ilya A. Zavidovskiy, Dmitry I. Yakubovsky, Roman R. Khakimov, Mikhail V. Lovygin, Viktor Li, Roman I. Romanov, Sergey M. Novikov, Andrey M. Markeev, Anna G. Chernikova

Institutions: Moscow Institute of Physics and Technology, Centre of Advanced Studies

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Higher Education of the Russian Federation

OpenAlex ID: W7225426116

FWCI:

Cites: 51

Cited by:

Related to: 10