Work

Memory Window Improvement in Ferroelectric Thin-Film Transistors with HfZrO2/AlN Bilayers Grown by Atomic Layer Deposition

Year: 2026

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.6c13795

Authors: Hyun Woo Nam, Dong Jae Kim, Min Kyu Yeom, Seong Jae Shin, Sang Hyup Lee, SeungHeon Choi, Han Sol Park, Kil Hwa Pi, Kyung Do Kim, Cheol Seong Hwang

Institutions: SK Group (United States), Seoul National University, SK Hynix (South Korea)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

OpenAlex ID: W7225428064

FWCI:

Cites: 77

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Related to: 10