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Development of Chalcogenide-Based Graded Bandgap Thin Film Structure of 𝒁𝒏𝑢𝑺/π‘Ίπ’ƒπŸπ‘ΊπŸ‘/π‘Ίπ’ƒπŸπ‘Ίπ’†πŸ‘ by Chemical bath deposition technique for Solar Cell Application

Year: 2026
Type: article
Abstract: A tri-layer ZnOS/Sb2S3/Sb2Se3 thin-film structure was successfully fabricated for potential application in heterojunction graded bandgap solar cells. The films were deposited using chemical bath deposition (CBD) technique, which provided a simple and cost-effective fabrication route. The fabricated ZnOS/Sb2S3/Sb2Se3 thin-film structure demonstrated good stability and excellent photon absorption capability over a wide spectral range. Optical analysis revealed high absorbance values in the UV region with an absorbance value of over 80%. X-ray diffraction (XRD) studies revealed that the deposited tri-layer films were amorphous in nature and remained amorphous after annealing. The film material exhibited both direct and indirect bandgap energies. Graded direct bandgap energy obtained for the ZnOS/Sb2S3/Sb2Se3 tri-layer structure ranged from 1.42 - 3.77 eV for as-grown and 1.67 – 3.48 eV for annealed film materials and the indirect graded bandgap energy for as-grown and annealed films were estimated to be 0.67 eV – 3.84 eV and 1.04 eV – 3.74 eV respectively. The elemental composition was confirmed by X-ray fluorescence (XRF) and energy dispersive X-ray (EDX) analyses. Atomic force microscopy (AFM) analysis showed that the root mean square (RMS) surface roughness of the ZnOS/Sb2S3/Sb2Se3 films decreased consistently with increasing annealing temperature. Overall, the graded bandgap characteristic of the ZnOS/Sb2S3/Sb2Se3 thin-film structure makes it a promising candidate for high-efficiency solar cell applications, as it supports effective absorption of photons across a broad range of the solar spectrum.
DOI: 10.5281/zenodo.24030873
Language: English
Open Access status: hybrid
OpenAlex ID: W7225452569
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