Charge Noise in Ge/SiGe Quantum Dots
Year: 2026
Type: article
Abstract: 1. Charge noise in Ge/SiGe quantum dots This technical review compares published charge-noise measurements in germanium quantum dots and examines how barrier depth, device operation, and measurement methods affect the comparison. A worked example shows how different noise spectra with the same amplitude at 1 Hz can produce different total fluctuations over a fixed frequency range. 2. Efficiency and bandwidth in electro-optic transduction This technical note reviews how microwave-to-optical converters report efficiency at the device ports and across the full link. An illustrative two-mode model shows how two settings can yield the same peak conversion efficiency while supporting different bandwidths. 3. Instrument response in ultrafast VO₂ spectroscopy This technical note reviews selected studies of photoinduced changes in vanadium dioxide. A simulated example shows how finite instrument response can bias the fitted decay time and how accounting for that response changes the estimate.
Author: Ullah, Arif
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7225588665