Vortex FeRAM v2 Engineering Specification
Year: 2026
Type: article
Abstract: The Vortex FeRAM is a non-volatile memory designed for applications where non-volatility, read latency, and very high cycle endurance are the dominant requirements. Key capabilities: Density: 1.46 GB/cm² (75% array efficiency) User capacity: 1.23 GB per 100 mm² die Read latency: 4.71 ns serial / 2.63 ns pipelined on-chip; ~7.7–9.7 ns system (6–9× faster than DDR5, 5,500–7,100× faster than NAND) Write latency: 45.2 ns per word average, ~48–50 ns system (comparable to DDR5, ~2,000× faster than NAND) Read bandwidth: 51.2 GB/s Write bandwidth: 0.7 GB/s pure-write (write-verify-limited) Write energy: 0.88 fJ per cell (cell-level; system-level ~6.5 pJ per bit including I/O) Endurance: 2.45 × 10⁹ cycles at 1% fail (24,500× NAND) Retention: >10 years at 85 °C Idle power: 109 mW (66 mW/GB) Cost per GB: $5.54 primary, $3.34 volume (comparable to DDR5) Non-volatile: >10 years retention, instant power-off, no refresh
Author: Hristov, Martin V.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7225628419
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