Work

Mg diffusion from p++ GaN cap layer degrades optically active acceptor density and radiative recombination in p-GaN

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0005867

Authors: Luyi Yan, Feng Liang, Jing Yang, Yuheng Zhang, Zongshun Liu, Yufei Hou, Degang Zhao

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225633690

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Cites: 22

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