Non‐Pixelated Spatial‐Spectral Imaging via Electrically Tunable Lateral Photocarrier Dynamics in a MoS 2 /p‐Ge Position‐Sensitive Detector
Year: 2026
Type: article
Abstract: ABSTRACT Spectral sensitivity is essential for advanced visual perception, including object identification, material discrimination, and high‐fidelity color reproduction. However, conventional spectral imaging systems often rely on pixel‐level wavelength‐selective filters, sacrificing spatial resolution and limiting spectral discrimination, or on vertically stacked heterostructures with electrically tunable band alignment, which increase fabrication complexity and array nonuniformity. Here, we present a non‐pixelated spatial‐spectral position‐sensitive detector (SSPSD) based on a large‐area MoS 2 /p‐Ge heterostructure that integrates spatial positioning and spectral discrimination within a single continuous junction. By combining the lateral photovoltaic effect with electrically tunable band alignment, the device converts wavelength‐dependent photocarrier generation and lateral transport into position‐resolved electrical signals for scanning reconstruction. The SSPSD achieves an estimated noise‐limited position localization precision of 0.54 µm under 1550 nm illumination at 500 µW and broadband sensitivity extending to 1700 nm. Spatial‐spectral imaging is demonstrated by resolving three overlapping character patterns illuminated at 550, 1310, and 1550 nm, respectively. These results establish bias‐modulated lateral photocarrier transport as a compact route toward non‐pixelated spatial‐spectral imaging with wavelength‐channel discrimination.
Source: Laser & Photonics Review
DOI: 10.1002/lpor.72176
Institution: Southeast University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7225651098