Bias‐Tunable Dual‐Interface Phototransistors for Polarization‐Sensitive Photodetection and Neuromorphic Vision
Year: 2026
Type: article
Abstract: ABSTRACT Optoelectronic devices that concurrently perform photodetection and synaptic computation are central to neuromorphic vision, yet they face an intrinsic trade‐off in which high‐speed detection demands rapid carrier transport while durable memory depends on slow charge trapping. Here, a bias‑tunable dual‑interface Ta 2 NiSe 5 /ReS 2 /Au van der Waals phototransistor is presented, in which two physically distinct interfaces are switched between two operational modes. At zero bias, the built‑in electric field at the Ta 2 NiSe 5 /ReS 2 heterojunction drives self‐powered, broadband (375–850 nm) polarization‐sensitive photodetection with a responsivity of 30 mA W −1 , detectivity of 7.7 × 10 9 Jones, and 66 µs response speed, further demonstrating polarization imaging and in‐sensor image processing. At positive bias, the elevated ReS 2 /Au Schottky barrier confines photogenerated carriers within intrinsic defect states, yielding a retention time exceeding 5000 s and thereby emulating short‑term to long‑term plasticity, paired‑pulse facilitation, and learning‑forgetting‑relearning behaviors. The device exhibits multi‐wavelength polarization‑sensitive static visual memory and serves as a physical front‐end that improves neural‐network recognition under low‐contrast degraded imaging. Leveraging its intrinsic temporal dynamics, the system enables with a motion direction classification accuracy of 96.67%. The dual‑interface strategy reconciles fast photodetection with long retention, offering a route to low‐power multifunctional neuromorphic vision hardware.
Source: Laser & Photonics Review
DOI: 10.1002/lpor.72208
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7225660284