Work

Applications of Directed Self-Assembly Lithography in Advanced Semiconductor Devices

Year: 2026

Type: article

Abstract: As semiconductor devices continue to scale down, conventional lithography technologies face increasingly severe challenges in resolution, stochastic defect control, and manufacturing cost. Block copolymer (BCP) directed self-assembly (DSA), which offers molecular-scale control over pattern formation and compatibility with existing lithographic processes, has emerged as a promising complementary nanopatterning technology for advanced semiconductor manufacturing. This review summarizes the microphase-separation mechanisms of DSA, major guiding strategies including graphoepitaxy and chemoepitaxy, and pattern-transfer techniques such as dry and wet etching and sequential infiltration synthesis (SIS). In terms of device applications, particular emphasis is placed on recent progress in DSA for Fin Field-Effect Transistor (FinFET) fin patterning, silicon nanostructures, high-density contact holes, memory devices, two-dimensional semiconductors, and Complementary Metal–Oxide–Semiconductor (CMOS) optoelectronic devices. Key challenges, including defect control, process-window optimization, pattern transfer, and wafer-scale manufacturing, are further discussed, together with future directions involving the integration of DSA with extreme ultraviolet (EUV) lithography, advanced etching, and data-driven process optimization. This review aims to outline the technological evolution of DSA from nanoscale self-assembly toward integration into advanced semiconductor manufacturing and to provide a reference for high-resolution patterning at advanced technology nodes.

Source: Materials

DOI: 10.3390/ma19214749