Work

ZnO Vacancy Homojunction for Phonon-Enhanced Directional Charge Transfer

Year: 2026

Type: article

Source: Chemistry of Materials

DOI: 10.1021/acs.chemmater.6c02534

Authors: Yi-Tian Wang, Shi-Tian Xiao, Jia-Jie Zhou, Si-Ming Wu, Kang-Jun Wu, Xiu-Shuo Yuan, Li-Ying Wang, Yi Lu, Wei Geng, Jie Ying, Ling Shen, Guo-Qiang Luo, Ge Tian, Matthias Driess, Ion Tiginyanu, Xiao-Yu Yang

Institutions: Wuhan University of Technology, Chinese Academy of Sciences, Sun Yat-sen University, Technische Universität Berlin, Technical University of Moldova

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225733238

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Cites: 41

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