Work

Enhancing electrical performance and E-mode operation of AlGaN channel MIS HEMTs through stacked-layer and multi-grade channel designs

Year: 2026

Type: article

Source: Engineering Research Express

DOI: 10.1088/2631-8695/aec06c

Authors: Wagma Hidayat, Muhammad Usman

Institution: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225741074

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