Ultralow Electron Temperature Plasma for Damage-Reduced Processing of High-k/Metal Gate Films toward Vertically Stacked Nanosheet Devices
Year: 2026
Type: article
Source: Nano Letters
Institution: Hanyang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225744655