Work

Thermal annealing-induced charge storage enhancement in WO3/β-Ga2O3 nanowire heterostructures for MOS capacitive memory

Year: 2026

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/aec020

Authors: Kesani Niranjan Kumar, Mritunjay Kumar, Goda Vasantharao, Jay Chandra Dhar

Institution: National Institute of Technology Nagaland

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225745621

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