Confinement‐Enabled Epitaxy of Single‐Crystal InN Fins Enables Room‐Temperature Ohmic Contact to GaN
Year: 2026
Type: article
Source: Advanced Functional Materials
DOI: 10.1002/adfm.79544
Institution: University of California San Diego
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225747758
