Improvement of structural and electronic properties of metamorphic InAs films on GaAs(111)A: Effects of growth temperature and insertion layers
Year: 2026
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/5.0353471
Authors: Takaaki Mano, Akihiro Ohtake, Takeshi Noda
Institution: National Institute for Materials Science
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225754813