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Thermal annealing effects on total-ionizing-dose radiation hardness in HfO2 /SiC MOS structures

Year: 2026

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/aec0ab

Authors: Yanning Chen, Jinyi Xu, Zhanwei Shen, Hangshuo Shi, Shaozhong Yue, Lei Shu, Zhen Fu, Shizhong Yue, Zhijie Wang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, Institute of Microelectronics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225776690

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