Work

LK-Model-Based TCAD Simulation of Hafnium-Oxide-Based Ferroelectric Memcapacitors for Radiation-Tolerant Neuromorphic Capacitive Synapses

Year: 2026

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aec0c5

Authors: wang xiao, Xingyu Li, Zirui Kong, Runyang Long, Man Li, Sen Liu, Jun Ouyang, Yingfang Zhu, Shaoan Yan

Institutions: Xiangtan University, National University of Defense Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225791455

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