Rapid formation of carbon-related defects in SiC induced by SiO desorption from thermally grown and ALD-deposited SiO 2 /4H-SiC(0001) stacks
Year: 2026
Type: article
Authors: Nan Su, Chuyang Lyu, Atsushi Tamura, Koji KITA
Institution: The University of Tokyo
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225810410
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