Work

Simultaneous extraction of multiple buffer-trap parameters in GaN HEMTs via measurement-window sweeping: A TCAD study

Year: 2026

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aec0c4

Authors: Yuhao Wang, Peiran Wang, Fangzhou Du, Hao Xiong, Zhongrui Wang, Chenkai Deng, Hongyu Yu

Institutions: Southern University of Science and Technology, Shenzhen Polytechnic University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225820960

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