Work

Temperature dependence of the current gain of Si/SiGe for device applications

Year: 1994

Type: other

Source: ePrints Soton (University of Southampton)

Authors: P. Ashburn, A. Nouailhat, M.R. Hashim, Geoff J.M. Parker, M. Mouis, David J. Robbins

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W75634827

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Related to: 20