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The influence of crystallographic orientation on the optical properties of wurtzite InGaN/GaN quantum wells

Year: 2010

Type: article

Source: Bulletin of the American Physical Society

Authors: S. Khatsevich, Daniel H. Rich, O. Moshe

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W78944540

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