Year: 2008
Type: article
Abstract: The IR reflection measurements of MnTe 2 were performed at room temperature under various pressures.It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure.The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of 10 22 cm -3 .Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.
Source: Acta Physica Polonica A
Institution: The University of Osaka
Language: English
Subfield: Geophysics
Field: Earth and Planetary Sciences
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W799963088