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Interface Energy Spectrum of Real PbTe/SnTe Heterojunction

Year: 1992

Type: article

Abstract: The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed both in the ( 111) and ( 001) planes is calculated.It is shown that even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface, midgap states may still exist due to the strain effect on the band gaps.

Source: Acta Physica Polonica A

DOI: 10.12693/aphyspola.82.805

Authors: V.I. Litvinov, M. Oszwałdowski

Institutions: National Academy of Sciences of Ukraine, Frantsevich Institute for Problems in Materials Science, Poznań University of Technology

Language: English

Topic: Topological Materials and Phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W885379915

FWCI:

Cites: 3

Cited by: 1

Related to: 10