Author

Toshiyuki Naka

Observed names: T. Naka, Toshiyuki NAKA

Institutions: Toshiba (Japan), Toshiba Electronic Devices & Storage Corporation (Japan)

Observed institutions: Toshiba (Japan), Kyushu University, Sharp Corporation (Japan), Toshiba Electronic Devices & Storage Corporation (Japan)

OpenAlex ID: A5000368168

Resonant switched capacitor converter with high efficiency

2004 · M. Shoyama, T. Naka, et al. · IEEE Power Electronics Specialists Conference (PESC) · 67

Breakdown behaviour of high-voltage GaN-HEMTs

2015 · W. Saito, T. Suwa, et al. · Microelectronics Reliability · 64

UIS test of high-voltage GaN-HEMTs with p-type gate structure

2016 · W. Saito, T. Naka · Microelectronics Reliability · 25

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs

2017 · W. Saito, T. Naka · Microelectronics Reliability · 21

SOI as a mainstream IC technology

2002 · A.O. Adan, T. Naka, et al. · IEEE International SOI Conference (SOI) · 21

UIS withstanding capability and mechanism of high voltage GaN-HEMTs

2016 · Toshiyuki Naka, Wataru Saito · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 18

HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction

2018 · Yasuhiro Okada, Takeshi Mizoguchi, et al. · IEEE Transactions on Electron Devices · 16

Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

2016 · Takeshi Mizoguchi, Toshiyuki Naka, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 16

Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs

2017 · Toshiyuki Naka, Wataru Saito · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13

Switching controllability of high voltage GaN-HEMTs and the cascode connection

2012 · Wataru Saito, Yasunobu Saito, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5

Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model

2016 · Takeshi Mizoguchi, Toshiyuki Naka, et al. · Japanese Journal of Applied Physics · 4

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10A 12V 1 chip digitally-controlled DC/DC converter IC with high resolution and high frequency DPWM

2008 · Kazutoshi Nakamura, Toshiyuki Naka, et al. · International Power Electronics and Motion Control Conference (IPEMC) · 4

Analysis of GaN-HEMT Switching Characteristics for High-Power Applications

2015 · T. Mizoguchi, T. Naka, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications

2017 · Takeshi MIZOGUCHI, Toshiyuki NAKA, et al. · IEICE Transactions on Electronics · 2

ESD protection structure with novel trigger technique for LDMOS based on BiCD process

2009 · Kazutoshi Nakamura, Toshiyuki Naka, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2

Demonstration of high frequency and 10A operation in 12V 1 chip DC/DC converter IC using bump technology

2007 · Kazutoshi Nakamura, Ken'ichi Matsushita, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1

p型ゲート構造を有する高電圧GaN‐HEMTのUIS試験【Powered by NICT】

2016 · Wataru Saito, Toshiyuki Naka · Microelectronics Reliability

Investigation of Breakdown Characteristics in High-voltage GaN-HEMTs

2015 · T. Suwa, W. Saito, et al. · International Conference on Solid State Devices and Materials (SSDM)

20A 5V single chip DC-DC converter IC with 5mohm MOSFET switch

2009 · Kazutoshi Nakamura, Toshiyuki Naka, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition

Works count: 19

Citation count: 282

H-index: 9

I10-index: 9