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Valery M. Mikoushkin

Observed names: Mikoushkin, V. M., Mikoushkin, V.M., Mikoushkin, Valerii M., V M Mikoushkin, V. M. Mikoushkin, V. М. Mikoushkin, V.M Mikoushkin, V.M. Mikoushkin, Valerii M. Mikoushkin, Valery Mikoushkin
Institution: Ioffe Institute
ORCID: 0000-0001-7443-7449
Observed ORCID: 0000-0001-7443-7449
OpenAlex ID: A5000490232
Hydrogenation, Purification, and Unzipping of Carbon Nanotubes by Reaction with Molecular Hydrogen: Road to Graphane Nanoribbons
2011 · Alexandr V. Talyzin, Serhiy Luzan, et al. · ACS Nano · 118
Diffraction of Fast Electrons on the Fullerene C60 Molecule
1998 · Leonid G. Gerchikov, Peotr V. Efimov, et al. · Physical Review Letters · 53
Controlling graphite oxide bandgap width by reduction in hydrogen
2011 · V. M. Mikoushkin, V. V. Shnitov, et al. · Technical Physics Letters · 19
Effect of ion irradiation on GaAs core-level electron binding energies and band structure
2020 · V.M. Mikoushkin, E.A. Makarevskaya, et al. · Applied Surface Science · 17
Graphene hydrogenation by molecular hydrogen in the process of graphene oxide thermal reduction
2013 · V. M. Mikoushkin, S. Yu. Nikonov, et al. · Applied Physics Letters · 17
Chemical composition of GaAs‐nitride nanolayers formed by implantation
2009 · V. M. Mikoushkin, Yu. S. Gordeev, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 17
Fullerite C60 as electron-beam resist for ‘dry’ nanolithography
2003 · V.V Shnitov, V.M Mikoushkin, et al. · Microelectronic Engineering · 16
Core electron level structure in C60F18 and C60F36 fluorinated fullerenes
2009 · V. M. Mikoushkin, V. V. Shnitov, et al. · Technical Physics Letters · 15
Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate
2015 · V.M. Mikoushkin, V.V. Shnitov, et al. · Carbon · 13
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Formation of GaAs1−N nanofilm on GaAs by low energy N2+ implantation
2011 · V.M. Mikoushkin · Applied Surface Science · 13
The p-n junction formation effect of an Ar + ion beam on the n-GaAs surface
2018 · V. M. Mikoushkin, V. V. Bryzgalov, et al. · Europhysics Letters (EPL) · 12
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Modification of the GaAs native oxide surface layer into the layer of the Ga2O3 dielectric by an Ar+ ion beam
2018 · V.M. Mikoushkin, V.V. Bryzgalov, et al. · Surface and Coatings Technology · 12
Ionization processes in small quasimolecules: He 22+ (He 2++ He)
2011 · G. N. Ogurtsov, S. Yu. Ovchinnikov, et al. · Physical Review A · 12
Elemental arsenic in the natural oxide on the MBE GaAs surface
2019 · V.M. Mikoushkin, A.P. Solonitsyna, et al. · Applied Surface Science · 11
Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer
2018 · V. M. Mikoushkin, V. V. Bryzgalov, et al. · Semiconductors · 11
Electron binding energy XPS control of n-GaAs with the atomically clean surface etched by Ar+ ions
2021 · V.M. Mikoushkin, E.A. Makarevskaya, et al. · Vacuum · 10
Formation of GaAsN/GaN cluster nanostructures on the surface of GaAs by the implantation of low-energy nitrogen ions
2012 · V. M. Mikoushkin, V. V. Bryzgalov, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 9
Single and Collective Electron Excitations in the Solid C60F18
2006 · V. V. Shnitov, V. M. Mikoushkin, et al. · Fullerenes Nanotubes and Carbon Nanostructures · 9
Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam
2018 · V. M. Mikoushkin, V. V. Bryzgalov, et al. · Semiconductors · 8
Valence band electronic structure of C60F18 and C60F36 studied by photoelectron spectroscopy
2008 · V.M. Mikoushkin, V.V. Shnitov, et al. · Journal of Electron Spectroscopy and Related Phenomena · 8
Correlated electron detachment in H−−He collisions
2006 · G. N. Ogurtsov, V. M. Mikoushkin, et al. · Physical Review A · 7
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
2019 · V. M. Mikoushkin, A. P. Solonitsyna, et al. · Semiconductors · 6
Non-thermal and low-destructive X-ray induced graphene oxide reduction
2018 · V. M. Mikoushkin, A. S. Kriukov, et al. · Journal of Applied Physics · 6
The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
2018 · N. A. Sobolev, B. Ya. Ber, et al. · Technical Physics Letters · 6
Graphite oxide Auger-electron diagnostics
2015 · V.M. Mikoushkin, A.S. Kriukov, et al. · Journal of Electron Spectroscopy and Related Phenomena · 6
Works count: 86
Citation count: 499
H-index: 12
I10-index: 16
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