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Ilgyu Choi

Observed names: Il-Gyu Choi, Il‐Gyu Choi
ORCID: 0000-0002-5566-3050
Observed ORCID: 0000-0002-5566-3050
OpenAlex ID: A5000528752
Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED
2019 · Ilgyu Choi, Kwanjae Lee, et al. · ACS Applied Materials & Interfaces · 36
Fast Response Characteristics of Flexible Ultraviolet Photosensors with GaN Nanowires and Graphene
2019 · Sangmoon Han, Ilgyu Choi, et al. · ACS Applied Materials & Interfaces · 29
Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel
2018 · Sangmoon Han, Seoung-Ki Lee, et al. · ACS Applied Materials & Interfaces · 26
Self-powered flexible piezoelectric motion sensor with spatially aligned InN nanowires
2024 · Jaehyeok Shin, Siyun Noh, et al. · Chemical Engineering Journal · 25
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
2021 · Sung-Jae Chang, Kyu-Jun Cho, et al. · Crystals · 12
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Terahertz biomedical imaging using a terahertz emitter based on InAs nanowires
2025 · Dong Woo Park, Young Bin Ji, et al. · Nanoscale · 11
Photoelectrochemical Water Splitting using GaN Nanowires with Reverse-Mesa Structures as Photoanode Material
2022 · Siyun Noh, Sangmoon Han, et al. · Applied Science and Convergence Technology · 11
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Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes
2022 · Ilgyu Choi, Sangjin Min, et al. · IET Optoelectronics · 8
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Formation Mechanism of GaN Nanowires with Various Shapes on Si(111)
2020 · Siyun Noh, Sangmoon Han, et al. · Journal of the Korean Physical Society · 8
Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface
2018 · Ilgyu Choi, Hyunjoong Lee, et al. · Nanotechnology · 8
Impact of Gate and Drain Distance on Device Characteristics in InAlGaN/GaN High Electron Mobility Transistors
2024 · Ilgyu Choi, Sung-Jae Chang, et al. · Applied Science and Convergence Technology · 7
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Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors
2017 · Sangmoon Han, Ilgyu Choi, et al. · Journal of Electronic Materials · 7
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications
2024 · Sung‐Jae Chang, Hyeon‐Seok Jeong, et al. · ETRI Journal · 6
Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs
2025 · Hyun‐Wook Jung, Il‐Gyu Choi, et al. · ETRI Journal · 5
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Structural and Optical Properties of GaN Nanowires Formed on Si(111)
2018 · Sangmoon Han, Ilgyu Choi, et al. · Applied Science and Convergence Technology · 5
Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra
2017 · Kwanjae Lee, Ilgyu Choi, et al. · Scientific Reports · 5
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Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
2023 · Hyun-Wook Jung, Il-Gyu Choi, et al. · Materials Science in Semiconductor Processing · 4
Investigation of In Situ NH3 and N2O Plasma Treatment on AlGaN/GaN High Electron Mobility Transistors
2024 · Dohyun Kim, Hyun-Wook Jung, et al. · Applied Science and Convergence Technology · 3
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Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs
2022 · Soo Cheol Kang, Hyun-Wook Jung, et al. · Current Applied Physics · 3
Thermal Cross-Talk Analysis in Multi-Finger Gallium Nitride High Electron Mobility Transistors
2025 · Junrae Park, Sung-Jae Chang, et al. · Applied Science and Convergence Technology · 2
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Structural and electrical characteristics of ultra-thin Si-doped GaN film regrown on patterned GaN/sapphire
2023 · Jaehyeok Shin, Siyun Noh, et al. · Journal of the Korean Physical Society · 2
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
2023 · Sung-Jae Chang, Dong-Seok Kim, et al. · Nanomaterials · 2
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An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 µ m Gallium Nitride-on-Silicon Carbide Process
2025 · Sang-Heung Lee, Hokyun Ahn, et al. · Applied Science and Convergence Technology · 1
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Thermal Design and Fabrication of Embedded Liquid Cooling for Gallium Nitride High Electron Mobility Transistor Devices
2025 · Minsoo Kang, Hyun-Wook Jung, et al. · Applied Science and Convergence Technology · 1
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Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement
2025 · Sung‐Jae Chang, Seokho Moon, et al. · Advanced Electronic Materials
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Works count: 31
Citation count: 227
H-index: 8
I10-index: 7
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