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Simone Fiorentini

Observed names: Fiorentini, Simone, S. Fiorentini
ORCID: 0000-0003-2982-7629
Observed ORCID: 0000-0003-2982-7629
OpenAlex ID: A5000588580
Spin and charge drift-diffusion in ultra-scaled MRAM cells
2022 · Simone Fiorentini, Mario Bendra, et al. · Scientific Reports · 39
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Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells
2020 · Johannes Ender, Mohamed Mohamedou, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 25
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions
2021 · S. Fiorentini, J. Ender, et al. · Solid-State Electronics · 22
The Metal‐Catalyzed Cyclotrimerization of Ferrocenylethyne – Preparation and Characterization of 1,2,4‐Triferrocenylbenzene
2006 · Simone Fiorentini, Barbara Floris, et al. · European Journal of Organic Chemistry · 22
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
2019 · R.L. de Orio, A. Makarov, et al. · Solid-State Electronics · 16
Finite Element Approach for the Simulation of Modern MRAM Devices
2023 · Simone Fiorentini, Nils Petter Jørstad, et al. · Micromachines · 15
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Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning
2021 · Roberto L. de Orio, Johannes Ender, et al. · Micromachines · 13
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Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach
2022 · T. Hadámek, S. Fiorentini, et al. · Solid-State Electronics · 12
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Micromagnetic modeling of SOT-MRAM dynamics
2023 · Nils Petter Jørstad, Simone Fiorentini, et al. · Physica B Condensed Matter · 11
Double Reference Layer STT-MRAM Structures with Improved Performance
2022 · Wilton Jaciel Loch, Simone Fiorentini, et al. · Solid-State Electronics · 11
Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
2019 · R.L. de Orio, A. Makarov, et al. · Physica B Condensed Matter · 11
Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell
2020 · R. L. de Orio, J. Ender, et al. · IEEE Journal of the Electron Devices Society · 9
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Emerging CMOS Compatible Magnetic Memories and Logic
2020 · Viktor Sverdlov, Simone Fiorentini, et al. · IEEE Latin American Electron Devices Conference (LAEDC) · 8
Micromagnetic modeling of double spin-torque magnetic tunnel junction devices
2024 · B. Pruckner, S. Fiorentini, et al. · Physica B Condensed Matter · 7
Finite element modeling of spin–orbit torques
2022 · Nils Petter Jørstad, Simone Fiorentini, et al. · Solid-State Electronics · 7
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Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells
2019 · Simone Fiorentini, Roberto Orio, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 7
Oxygen Acidity of Ring Methoxylated 1,1-Diarylalkanol Radical Cations Bearing α-Cyclopropyl Groups. The Competition between O-Neophyl Shift and C−Cyclopropyl β-Scission in the Intermediate 1,1-Diarylalkoxyl Radicals
2006 · Massimo Bietti, Simone Fiorentini, et al. · The Journal of Organic Chemistry · 7
Reinforcement learning to reduce failures in SOT-MRAM switching
2022 · Johannes Ender, Roberto Lacerda de Orio, et al. · Microelectronics Reliability · 6
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Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling
2020 · Simone Fiorentini, Johannes Ender, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6
Finite Element Method Approach to MRAM Modeling
2021 · M. Bendra, J. Ender, et al. · International Convention on Information and Communication Technology, Electronics and Microelectronics · 5
Emerging CMOS Compatible Magnetic Memories and Logic
2021 · Johannes Ender, Simone Fiorentini, et al. · IEEE Journal of the Electron Devices Society · 5
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Spin Torques in ULTRA-Scaled MRAM Devices
2022 · Simone Fiorentini, Mario Bendra, et al. · European Solid-State Device Research Conference · 4
Interface effects in ultra-scaled MRAM cells
2022 · M. Bendra, S. Fiorentini, et al. · Solid-State Electronics · 4
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Temperature Increase in MRAM at Writing: A Finite Element Approach
2021 · Tomas Hadamek, Mario Bendra, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 4
Reinforcement learning approach for deterministic SOT-MRAM switching
2021 · Johannes Ender, Roberto Orio, et al. · Spintronics · 4
Works count: 63
Citation count: 337
H-index: 11
I10-index: 11
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