Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Yoshinori Matsuno
Observed names:
Y Matsuno,
Y. Matsuno,
吉徳 松野
Observed institution:
Mitsubishi Electric (Japan)
OpenAlex ID:
A5000838098
High-efficient operation of large-area (100 cm2) thin film polycrystalline silicon solar cell based on SOI structure
1994
·
S. Arimoto
, H. Morikawa
, et al.
·
Solar Energy Materials and Solar Cells
·
30
Leakage current in Ti/4H-SiC Schottky barrier diode
2006
·
K. Ohtsuka
, Y. Matsuno
, et al.
·
Physica B Condensed Matter
·
22
4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
2009
·
Naruhisa Miura
, Shohei Yoshida
, et al.
·
Japanese Journal of Applied Physics
·
14
PDF
Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization
2001
·
H Morikawa
, Y Kawama
, et al.
·
Solar Energy Materials and Solar Cells
·
14
Prospect of the high efficiency for the VEST (via-hole etching for the separation of thin films) cell
2002
·
M. Deguchi
, Y. Kawama
, et al.
·
World Conference on Photovoltaic Energy Conversion
·
13
Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator
1994
·
Hajime Sasaki
, Hiroaki Morikawa
, et al.
·
Japanese Journal of Applied Physics
·
11
Influence of pinning trap in Ti/4H–SiC Schottky barrier diode
2003
·
K. Ohtsuka
, Y. Matsuno
, et al.
·
Materials Science in Semiconductor Processing
·
5
Characterization of thickness dependence on defect density and hydrogen passivation for thin film polycrystalline silicon solar cells
2002
·
S. Arimoto
, H. Morikawa
, et al.
·
World Conference on Photovoltaic Energy Conversion
·
3
Suppression of substrate distortion during zone–melting recrystallization process for thin film silicon solar cells
2001
·
K Imada
, Y Matsuno
, et al.
·
Solar Energy Materials and Solar Cells
·
3
Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
2008
·
Kenichi Kuroda
, Yoshinori Matsuno
, et al.
·
Materials science forum
·
1
1.7kV大容量ハイブリッドSiCモジュール (特集 パワーデバイス)
2012
·
滋 長谷川
, 和博 森下
, et al.
·
三菱電機技報
Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer
2008
·
Kenichi Ohtsuka
, Yoichiro Tarui
, et al.
·
Materials science forum
4H-SiC Power MOSFETs and SBDs of 1.7kV Rating
2008
·
N. Miura
, S. Yoshida
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Show more works
View as search
Works count:
13
Citation count:
116
H-index:
6
I10-index:
6
Year
Topic
Type
