Author

Lingkuan Meng

Observed names: L. Meng, Ling-Kuan Meng

Observed institutions: Chinese Academy of Sciences, Chengdu University of Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Chengdu Technological University, Beihang University

ORCID: 0000-0002-0852-9529

Observed ORCID: 0000-0002-0852-9529

OpenAlex ID: A5000869304

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

2018 · Qinzhu Zhang, Huaxiang Yin, et al. · IEEE Electron Device Letters · 50

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

2016 · Qingzhu Zhang, Huaxiang Yin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45

Effect of process parameters on sidewall damage in deep silicon etch

2015 · Lingkuan Meng, Jiang Yan · Journal of Micromechanics and Microengineering · 33

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Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

2015 · Weijia Xu, Huaxiang Yin, et al. · Nanoscale Research Letters · 23

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Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays

2018 · Qingzhu Zhang, Hailing Tu, et al. · Microelectronic Engineering · 20

Mechanism study of sidewall damage in deep silicon etch

2014 · Lingkuan Meng, Jiang Yan · Applied Physics A · 16

Innovatively composite hard mask to feature sub-30nm gate patterning

2014 · Lingkuan Meng, Chunlong Li, et al. · Microelectronic Engineering · 15

Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs

2017 · Changliang Qin, Huaxiang Yin, et al. · Microelectronic Engineering · 14

A Novel Nanofabrication Technique of Silicon-Based Nanostructures

2016 · Lingkuan Meng, Xiaobin He, et al. · Nanoscale Research Letters · 14

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Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

2015 · Yanbo Zhang, Huilong Zhu, et al. · IEEE Transactions on Electron Devices · 13

Transistor gate line roughness formation and reduction in sub-30-nm gate patterning using multilayer hard mask structure

2014 · Lingkuan Meng, Xiaobin He, et al. · Journal of Micro/Nanopatterning Materials and Metrology · 10

Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices

2015 · Lingkuan Meng, Peizhen Hong, et al. · Applied Surface Science · 8

Aspect Ratio Dependent Analytic Model and Application in Deep Silicon Etch

2014 · L. Meng, J. Li, et al. · ECS Solid State Letters · 8

Study of the ordered assembly morphologies of diblock copolymers on the same substrate

2022 · Baolin Zhang, Lingkuan Meng, et al. · RSC Advances · 6

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Etch Mechanism Study in Gate Patterning for 14 nm Node and beyond FinFET Devices

2017 · Lingkuan Meng, Jiang Yan · ECS Journal of Solid State Science and Technology · 5

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Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films

2015 · Wenhui Chen, Jun Luo, et al. · Thin Solid Films · 5

CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask

2015 · Lingkuan Meng, Jianfeng Gao, et al. · Nanoscale Research Letters · 5

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Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs

2015 · Miao Xu, Huaxiang Yin, et al. · Journal of Semiconductors · 5

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Self-aligned metallic source and drain fin-on-insulator FinFETs with excellent short channel effects immunity down to 20 nm gate length

2018 · Qingzhu Zhang, Junjie Li, et al. · China Semiconductor Technology International Conference (CSTIC) · 4

Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

2014 · Lichuan Zhao, Zhaoyun Tang, et al. · IEEE Electron Device Letters · 4

Metal gate etch-back planarization technology

2012 · Lingkuan Meng, Huaxiang Yin, et al. · Journal of Semiconductors · 4

The Influence of Binders on the Performances of Ni(OH)2 Positive Electrode in Supercapacitor

2006 · Weiping Yu, Xiaoping Yang, et al. · ECS Transactions · 4

Study of the perpendicular self-assembly of a novel high- χ block copolymer without any neutral layer on a silicon substrate

2019 · Baolin Zhang, Weichen Liu, et al. · RSC Advances · 3

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Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

2016 · Weijia Xu, Huaxiang Yin, et al. · nano Online · 3

Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs

2016 · Changliang Qin, Guilei Wang, et al. · Solid-State Electronics · 2

Works count: 45

Citation count: 328

H-index: 10

I10-index: 11