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Masahiko Ogura

Electrically driven single-photon source at room temperature in diamond
2012 · N. Mizuochi, T. Makino, et al. · Nature Photonics · 365
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
2016 · Tsubasa Matsumoto, Hiromitsu Kato, et al. · Scientific Reports · 208
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Leakage current analysis of diamond Schottky barrier diode
2007 · Hitoshi Umezawa, Takeyasu Saito, et al. · Applied Physics Letters · 140
Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins
2017 · Takayuki Iwasaki, Wataru Naruki, et al. · ACS Nano · 115
600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$
2014 · Takayuki Iwasaki, Junya Yaita, et al. · IEEE Electron Device Letters · 92
Diamond Schottky-pn diode with high forward current density and fast switching operation
2009 · Toshiharu Makino, Satoshi Tanimoto, et al. · Applied Physics Letters · 89
High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers
2009 · Kazuihiro Oyama, Sung-Gi Ri, et al. · Applied Physics Letters · 84
Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond
2014 · Y. Doi, T. Makino, et al. · Physical Review X · 83
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Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode
2011 · Toshiharu Makino, Kiyoshi Yoshino, et al. · Applied Physics Letters · 82
N-type control of single-crystal diamond films by ultra-lightly phosphorus doping
2016 · Hiromitsu Kato, Masahiko Ogura, et al. · Applied Physics Letters · 80
Diamond Junction Field-Effect Transistors with Selectively Grown n$^{+}$-Side Gates
2012 · Takayuki Iwasaki, Yuto Hoshino, et al. · Applied Physics Express · 77
Electrical characterization of diamond Pi N diodes for high voltage applications
2013 · Mariko Suzuki, Tadashi Sakai, et al. · physica status solidi (a) · 75
Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling
2006 · Hitoshi Umezawa, Norio Tokuda, et al. · Diamond and Related Materials · 72
High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions
2013 · Takayuki Iwasaki, Yuto Hoshino, et al. · IEEE Electron Device Letters · 70
n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
1999 · Masataka Hasegawa, Daisuke Takeuchi, et al. · Japanese Journal of Applied Physics · 68
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Selective Growth of Buried n+Diamond on (001) Phosphorus-Doped n-Type Diamond Film
2009 · Hiromitsu Kato, Toshiharu Makino, et al. · Applied Physics Express · 63
Diamond bipolar junction transistor device with phosphorus-doped diamond base layer
2012 · Hiromitsu Kato, Kazuhiro Oyama, et al. · Diamond and Related Materials · 62
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
2014 · Akira Nakajima, Pucheng Liu, et al. · Journal of Applied Physics · 61
Ohmic contacts on p-type homoepitaxial diamond and their thermal stability
2005 · Yigang Chen, Masahiko Ogura, et al. · Semiconductor Science and Technology · 60
Negative electron affinity of diamond and its application to high voltage vacuum power switches
2013 · D. Takeuchi, S. Koizumi, et al. · physica status solidi (a) · 59
Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base
2013 · Hiromitsu Kato, Toshiharu Makino, et al. · Diamond and Related Materials · 55
High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p–i–n Junction
2006 · Toshiharu Makino, Norio Tokuda, et al. · Japanese Journal of Applied Physics · 54
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Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel
2015 · Taisuke Suwa, Takayuki Iwasaki, et al. · IEEE Electron Device Letters · 47
Atomically flat diamond (111) surface formation by homoepitaxial lateral growth
2008 · Norio Tokuda, Hitoshi Umezawa, et al. · Diamond and Related Materials · 46
Diamond electronic devices fabricated using heavily doped hopping p + and n + layers
2014 · Toshiharu Makino, Kazuhiro Oyama, et al. · Japanese Journal of Applied Physics · 45
Works count: 240
Citation count: 3,964
H-index: 36
I10-index: 90
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