Author

Arto K. Salokatve

Observed names: A Salokatve, A. Salokatve, Arto Salokatve, SALOKATVE, ARTO

Observed institutions: Brown University, Tampere University of Technology, Coherent (United States)

OpenAlex ID: A5006509362

Continuous-wave, room temperature, ridge waveguide green-blue diode laser

1993 · A. Salokatve, H. Jeon, et al. · Electronics Letters · 136

Identification of the Native Vacancy Defects in Both Sublattices of ZnSxSe1−x by Positron Annihilation

1996 · K. Saarinen, T. Laine, et al. · Physical Review Letters · 51

All-solid-source molecular beam epitaxy for growth of III–V compound semiconductors

1997 · M. Pessa, M. Toivonen, et al. · Thin Solid Films · 39

Pseudomorphic separate confinement heterostructure blue-green diode lasers

1993 · D. C. Grillo, Y. Fan, et al. · Applied Physics Letters · 39

On degradation of ZnSe-based blue-green diode lasers

1995 · M. Hovinen, J. Ding, et al. · Journal of Applied Physics · 37

New approach to growth of high-quality GaAs layers on Si substrates

1987 · J. Varrio, H. Asonen, et al. · Applied Physics Letters · 33

Band offsets at the GaInP/GaAs heterojunction

1997 · A. Lindell, M. Pessa, et al. · Journal of Applied Physics · 29

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Reduction of surface defects in GaAs grown by molecular beam epitaxy

1987 · A. Salokatve, J. Varrio, et al. · Applied Physics Letters · 27

Growth mode and electronic structure of copper films on aluminium substrates

1987 · C.J. Barnes, H. Asonen, et al. · Surface Science · 27

All solid source molecular beam epitaxy growth of1.35 µm wavelengthstrained-layer GaInAsP quantum well laser

1995 · M. Toivonen, A. Salokatve, et al. · Electronics Letters · 26

Electronic structure of Cu75 Au25 disordered alloy

1990 · E. Arola, R. S. Rao, et al. · Physical review. B, Condensed matter · 26

Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry

1995 · P. Uusimaa, K. Rakennus, et al. · Applied Physics Letters · 25

High performance laser diode bars with aluminum-free active regions

1999 · Mitch Jansen, P. Bournes, et al. · Optics Express · 23

All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

1995 · Mika Toivonen, Marko Jalonen, et al. · Applied Physics Letters · 22

The growth mode of Cu overlayers on Pd(100)

1985 · H. Asonen, C. Barnes, et al. · Applications of Surface Science · 21

Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

1995 · A. Salokatve, K. Rakennus, et al. · Applied Physics Letters · 18

Oxide-confined resonant cavity red light-emittingdiode grown by solid source molecular beam epitaxy

1997 · M. Jalonen, M. Toivonen, et al. · Electronics Letters · 17

Gain characteristics of blue/green II-VI quantum well diode lasers

1994 · V. Kozlov, A. Salokatve, et al. · Applied Physics Letters · 17

Low voltage, room temperature, ridge waveguide green-blue diode laser

1993 · A Salokatve, H. Jeon, et al. · Electronics Letters · 17

The effect of interdiffusion on the growth mode of copper on Al{111}

1985 · H. Asonen, C.J. Barnes, et al. · Surface Science · 17

Mode-induced transverse photodarkening loss variations in large-mode-area ytterbium doped silica fibers

2008 · Mikko J. Söderlund, Joan J. Montiel i Ponsoda, et al. · Optics Express · 15

The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

1990 · A. Salokatve, M. Hovinen · Journal of Applied Physics · 15

Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy

1998 · M. Jalonen, J. Kongas, et al. · IEEE Photonics Technology Letters · 14

GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

1992 · M. Toivonen, A. Salokatve, et al. · Electronics Letters · 13

Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses

1991 · M. Hovinen, A. Salokatve, et al. · Journal of Applied Physics · 13

Works count: 101

Citation count: 889

H-index: 17

I10-index: 28