Author

J. Brian Mullin

Observed names: J B Mullin, J. B MULLIN, J. B. MULLIN, J. B. Mullin, J.B Mullin, J.B. MULLIN, J.B. Mullin, John B. Mullin, Mullin, J.B., Mullin,J. B.

Observed institutions: Royal Historical Society, BT Group (United Kingdom), University of St Andrews, Durham University, Coventry (United Kingdom), TetraLogic Pharmaceuticals (United States), University of Southampton, Massachusetts Institute of Technology

ORCID: 0009-0008-4905-2027

Observed ORCID: 0009-0008-4905-2027

OpenAlex ID: A5011483092

The incorporation and characterisation of acceptors in epitaxial GaAs

1975 · D.J. Ashen, P.J. Dean, et al. · Journal of Physics and Chemistry of Solids · 560

A new MOVPE technique for the growth of highly uniform CMT

1984 · J. Tunnicliffe, S.J.C. Irvine, et al. · Journal of Crystal Growth · 222

Organometallic growth of II–VI compounds

1981 · J.B. Mullin, S.J.C. Irvine, et al. · Journal of Crystal Growth · 175

Indium Phosphide

1973 · E. W. Williams, W. Elder, et al. · Journal of The Electrochemical Society · 155

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Indium antimonide—A review of its preparation, properties and device applications

1962 · K.F. Hulme, J.B. Mullin · Solid-State Electronics · 155

The growth by MOVPE and characterisation of CdxHg1−xTe

1981 · S.J.C. Irvine, J.B. Mullin · Journal of Crystal Growth · 132

Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals

1965 · J.B. Mullin, B.W. Straughan, et al. · Journal of Physics and Chemistry of Solids · 126

The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide

1972 · A M White, P J Dean, et al. · Journal of Physics C Solid State Physics · 109

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Liquid encapsulation crystal pulling at high pressures

1968 · J.B. Mullin, R.J. Heritage, et al. · Journal of Crystal Growth · 101

Photosensitisation: A stimulant for the low temperature growth of epitaxial HgTe

1984 · S.J.C. Irvine, J.B. Mullin, et al. · Journal of Crystal Growth · 78

Crystal growth and properties of group IV doped indium phosphide

1972 · J.B. Mullin, A. Royle, et al. · Journal of Crystal Growth · 77

Facets and anomalous solute distributions in indium-antimonide crystals

1959 · K. F. Hulme, J. B. Mullin · Philosophical magazine · 74

Orientation-dependent distribution coefficients in melt-grown InSb crystals

1960 · J.B. Mullin, K.F. Hulme · Journal of Physics and Chemistry of Solids · 69

The diffusion of copper in cadmium telluride

1992 · E.D. Jones, N.M. Stewart, et al. · Journal of Crystal Growth · 67

Lattice superdilation phenomena in doped GaAs

1976 · J. B. Mullin, B. W. Straughan, et al. · Journal of Applied Physics · 61

Recent developments in the MOVPE of II–VI compounds

1985 · J.B. Mullin, S.J.C. Irvine, et al. · Journal of Crystal Growth · 50

The growth of highly uniform cadmium mercury telluride by a new MOVPE technique

1984 · S.J.C. Irvine, J. Tunnicliffe, et al. · Materials Letters · 50

Acceptor levels in gallium arsenide (luminescence measurements)

1973 · A M White, P J Dean, et al. · Journal of Physics C Solid State Physics · 48

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The growth of CdxHg1−xTe using organometallics

1982 · J. B. Mullin, S. J. C. Irvine · Journal of Vacuum Science and Technology · 47

A study on the relationship between growth technique and dopants on the electrical properties of GaAs with special reference to LEC growth

1980 · J.B. Mullin, A. Royle, et al. · Journal of Crystal Growth · 47

Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materials

1988 · S.J.C. Irvine, J.B. Mullin, et al. · Journal of Crystal Growth · 46

A study of the structure and electrical properties of CdxHg1−xTe grown by metalorganic vapor phase epitaxy (interdiffused multilayer process)

1989 · S. J. C. Irvine, J. S. Gough, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 44

Ultraviolet assisted growth of II–VI compounds

1986 · J. B. Mullin, S. J. C. Irvine · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 43

Photo-metal organic vapor phase epitaxy: A low temperature method for the growth of CdxHg1−xTe

1985 · S. J. C. Irvine, J. Giess, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 43

Epitaxy of mixed III–V compounds

1973 · J.B. Mullin, D.T.J. Hurle · Journal of Luminescence · 42

Works count: 170

Citation count: 4,094

H-index: 32

I10-index: 80