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Tomohiro Doi
Institution:
Nagoya University
Observed institution:
Nagoya University
OpenAlex ID:
A5013474752
High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
2013
·
Tomotaka Sano
, Tomohiro Doi
, et al.
·
Japanese Journal of Applied Physics
·
25
PDF
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013
·
Tomohiro Doi
, Yoshio Honda
, et al.
·
Japanese Journal of Applied Physics
·
23
PDF
High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate (Special Issue : Recent Advances in Nitride Semiconductors)
2013
·
Tomotaka Sano
, Tomohiro Doi
, et al.
·
Japanese Journal of Applied Physics
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
2013
·
Tomohiro Doi
, Yoshio Honda
, et al.
·
Japanese Journal of Applied Physics
InGaN/GaN multi-quantum well growth by raised pressure MOVPE
2013
·
Tomohiro Doi
·
The Japan Society of Applied Physics
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Works count:
5
Citation count:
48
H-index:
2
I10-index:
2
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