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D. G. Schimmel
Observed names:
D. G. SCHIMMEL,
D.G. Schimmel,
Donald G. Schimmel
Observed institutions:
AT&T (United States),
North Carolina State University,
MCNC Research and Development Institute,
Raytheon (United States)
OpenAlex ID:
A5013917841
Defect Etch for <100> Silicon Evaluation
1979
·
D. G. Schimmel
·
Journal of The Electrochemical Society
·
182
A Comparison of Chemical Etches for Revealing <100> Silicon Crystal Defects
1976
·
D. G. Schimmel
·
Journal of The Electrochemical Society
·
51
An Examination of the Chemical Staining of Silicon
1978
·
D. G. Schimmel
, M. J. Elkind
·
Journal of The Electrochemical Society
·
26
PDF
Point Defect Generation during Phosphorus Diffusion in Silicon: I . Concentrations above Solid Solubility
1987
·
J. C. C. Tsai
, D. G. Schimmel
, et al.
·
Journal of The Electrochemical Society
·
24
Point Defect Generation during Phosphorus Diffusion in Silicon: II . Concentrations below Solid Solubility, Ion‐Implanted Phosphorus
1987
·
J. C. C. Tsai
, D. G. Schimmel
, et al.
·
Journal of The Electrochemical Society
·
15
PDF
Selective epitaxial growth of silicon
1991
·
J.W. Osenbach
, D.G. Schimmel
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
10
Coated powder cathodes — Applications and technology
1979
·
V.E. Rutter
, D.G. Schimmel
, et al.
·
Applications of Surface Science
·
10
Comparison of Boron Profiles by the Spreading Resistance Profile and the Secondary Ion Mass Spectrometry Techniques
1990
·
R. A. Clapper
, D. G. Schimmel
, et al.
·
Journal of The Electrochemical Society
·
8
PDF
The nature of residual stress, defects, and device characteristics for thick single-crystalline Si films on oxidized Si wafers
1988
·
L. E. Trimble
, G. K. Celler
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
1
Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays
1986
·
P.K. Tse
, J.C. Gammel
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
Thermal behavior of thick vacuum evaporated polycrystalline silicon layer
1985
·
Yusuke Ota
, Raymond A. Clapper
, et al.
·
Journal of Applied Physics
·
1
ChemInform Abstract: DEFECT ETCH FOR <100> SILICON EVALUATION
1979
·
D. G. SCHIMMEL
·
ChemInform
ChemInform Abstract: A COMPARISON OF CHEMICAL ETCHES FOR REVEALING .LTBBRAC.100.RTBBRAC. SILICON CRYSTAL DEFECTS
1976
·
D. G. SCHIMMEL
·
ChemInform
Cermet resistors from CVD coated particles
1973
·
Charlotte Pleass
, D. G. Schimmel
, et al.
·
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
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Works count:
16
Citation count:
329
H-index:
8
I10-index:
7
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