Author

Rolf Gerlach

Observed names: R Gerlach, R. Gerlach

Institution: Infineon Technologies (Germany)

Observed institutions: Infineon Technologies (Germany), Max Planck Society, Heidelberg University, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Paris-Saclay, Infineon Technologies (United States), Ruhr University Bochum

OpenAlex ID: A5015275201

Structure of Heptanethiolate Monolayers on Au(111): Adsorption from Solution vs Vapor Deposition

1997 · H.-J. Himmel, Ch. Wöll, et al. · Langmuir · 67

Structure and dynamics of : a helium atom scattering study

1995 · R. Gerlach, A. Glebov, et al. · Surface Science · 52

Chain length dependence of the structure of alkane thiol films on Au(111)

1997 · F. Balzer, R. Gerlach, et al. · Chemical Physics Letters · 46

Avalanche behaviour and its temperature dependence of commercial SiC MPS diodes: Influence of design and voltage class

2014 · R. Rupp, R. Gerlach, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 41

Structural manipulation of ultrathin organic films on metal surfaces: the case of decane thiol/Au(111)

1997 · R. Gerlach, G. Polanski, et al. · Applied Physics A · 40

Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology

2013 · R. Rupp, R. Kern, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 30

A novel method to determine the Ehrlich–Schwoebel barrier

2001 · R Gerlach, T Maroutian, et al. · Surface Science · 27

Performance of a 650V SiC Diode with Reduced Chip Thickness

2012 · Roland Rupp, Rolf Gerlach, et al. · Materials science forum · 26

Photodesorption of Na atoms from rough Na surfaces

1997 · F. Balzer, R. Gerlach, et al. · The Journal of Chemical Physics · 26

Focused inelastic resonances in the scattering of He atoms from NaCl(001)

1996 · G. Benedek, R. Gerlach, et al. · Physical review. B, Condensed matter · 25

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Structure and phase transitions of ultrathin films of alkanes adsorbed on Cu(111)

1999 · D. Fuhrmann, R. Gerlach, et al. · Surface Science · 24

A new SiC diode with significantly reduced threshold voltage

2017 · Roland Rupp, Rudolf Elpelt, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 21

Avalanche Robustness of SiC MPS Diodes

2016 · Thomas Basler, Roland Rupp, et al. · 19

Electro - Thermal Simulations and Experimental Results on the Surge Current Capability of 1200 V SiC MPS Diodes

2014 · Susanne Fichtner, Josef Lutz, et al. · 19

A New 1200V SiC MPS Diode with Improved Performance and Ruggedness

2015 · Mihai Draghici, Roland Rupp, et al. · Materials science forum · 17

Ruggedness of 1200 V SiC MPS diodes

2015 · S. Fichtner, S. Frankeser, et al. · Microelectronics Reliability · 16

High frequency power LDMOS technologies for base station applications status, potential, and benchmarking

2006 · G. Ma, Qiang Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16

Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation

2012 · Roland Rupp, Rolf Gerlach, et al. · Materials science forum · 15