Author

S. Lampe

Institution: RWTH Aachen University

Observed institution: RWTH Aachen University

OpenAlex ID: A5019458038

Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devices

1997 · M. Heuken, J. Söllner, et al. · Journal of Crystal Growth · 23

Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxy

1996 · W. Taudt, S. Lampe, et al. · Journal of Crystal Growth · 10

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

1995 · W. Taudt, B. Wachtendorf, et al. · Journal of Electronic Materials · 7

Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy

1997 · W. Taudt, A. Hardt, et al. · Journal of Crystal Growth · 5

Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursor

1997 · A.L. Gurskii, W. Taudt, et al. · Journal of Crystal Growth · 4

Electrical characterization of doped ZnSe-based heterostructures grown by MOVPE

1996 · S. Lampe, M. Germain, et al. · Journal of Crystal Growth · 2

Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System

1995 · W. Taudt, B. Wachtendorf, et al. · Materials science forum · 2

On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements

1998 · M. Germain, R. Evrard, et al. · Journal of Electronic Materials · 1

Transient Photocurrent and Photocapacitance Measurements on Au-ZnSe-GaAs Structures

1996 · R. Evrard, Marianne Germain, et al. · APS March Meeting Abstracts

Low Temperature Growth and Planar Doping of in a Plasma-Stimulated LP-MOVPE System ZnSe

1995 · W. Taudt, B. Wachtendorf, et al.

Works count: 10

Citation count: 54

H-index: 4

I10-index: 2