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J. Behrend

Interactive Loomis-Wood assignment programs
1989 · Brenda P. Winnewisser, Jürgen Reinstädtler, et al. · Journal of Molecular Spectroscopy · 161
Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
1996 · H. Yang, O. Brandt, et al. · Applied Physics Letters · 59
Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)
1995 · J.-T. Zettler, J. Rumberg, et al. · physica status solidi (a) · 43
Domain formation on the reconstructed GaAs(001) surface
1995 · J. Behrend, M. Wassermeier, et al. · Surface Science · 36
Spectra of deuterated disulfane and spectroscopic determination of its molecular structure
1991 · J. Behrend, P. Mittler, et al. · Journal of Molecular Spectroscopy · 35
Wafer fused p-InP/p-GaAs heterojunctions
1998 · F. Salomonsson, K. Streubel, et al. · Journal of Applied Physics · 31
Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy
1997 · J. F. Carlin, A. V. Syrbu, et al. · Applied Physics Letters · 30
Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy
1995 · R. Hey, M. Wassermeier, et al. · Journal of Crystal Growth · 30
Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition
1995 · M. Wassermeier, J. Behrend, et al. · Physical review. B, Condensed matter · 29
InGaAs/InGaAsP/InP edge emitting laser diodes on p -GaAs substrates obtained by localised wafer fusion
1997 · A.V. Syrbu, J. Fernandez, et al. · Electronics Letters · 27
Synthesis and Molecular Structure of Disulfane
1991 · Josef Hahn, Petra Schmidt, et al. · Zeitschrift für Naturforschung B · 25
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Insituspectroscopic ellipsometry of GaAs(001) surface reconstructions
1996 · M. Wassermeier, J. Behrend, et al. · Physical review. B, Condensed matter · 20
Structure of the wafer fused InP (001)-GaAs (001) interface
1997 · L. Sagalowicz, A. Rudra, et al. · Philosophical Magazine Letters · 19
Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
1995 · L. Däweritz, H. Kostial, et al. · Journal of Crystal Growth · 18
Atomic structure of the surface reconstructions of zincblende GaN(001)
1997 · M Wassermeier, A Yamada, et al. · Surface Science · 17
Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy
1996 · J. Behrend, M. Wassermeier, et al. · Journal of Crystal Growth · 16
Formation of GaAs/AlAs(001) interfaces studied by scanning tunneling microscopy
1996 · J. Behrend, M. Wassermeier, et al. · Physical review. B, Condensed matter · 16
In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions
1996 · M Wassermeier, J Behrend, et al. · Applied Surface Science · 15
Precision Measurement of the rQ2 Branch at 700 GHz and the rQ3 Branch at 980 GHz of Hssh
1994 · S.P. Belov, M. Liedtke, et al. · Journal of Molecular Spectroscopy · 13
Complete rotational analysis of the ground state of HSSH
1990 · J. Behrend, P. Mittler, et al. · Journal of Molecular Spectroscopy · 13
Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition
1997 · H. Oigawa, M. Wassermeier, et al. · Surface Science · 12
Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces
1997 · J. Behrend, M. Wassermeier, et al. · Surface Science · 10
AnomalousK-Type Doubling of HSSH
1996 · Koichi M.T. Yamada, Jörg Behrend, et al. · Journal of Molecular Spectroscopy · 9
Tailoring of Si doping layers in GaAs during molecular beam epitaxy
1996 · L. Däweritz, H. Kostial, et al. · physica status solidi (b) · 8
Characteristics of InAsP/InGaAsP edge emitting laserdiodes obtained by localisedfusion on GaAs substrates
1997 · A.V. Syrbu, J. Fernandez, et al. · Electronics Letters · 7
Works count: 44
Citation count: 749
H-index: 16
I10-index: 22
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