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Soichiro Miyano

Design and performance of traveling-wave tubes using field emitter array cathodes
1999 · H Makishima, S Miyano, et al. · Applied Surface Science · 50
A novel vertical current limiter fabricated with a deep trench forming technology for highly reliable field emitter arrays
2002 · H. Takemura, Y. Tomihari, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions
2019 · K. Ota, M. Yamaguchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
A surface potential based poly-Si TFT model for circuit simulation
2008 · Soichiro Miyano, Yoshiteru Shimizu, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 18
A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation
2006 · H. Tsuji, T. Kuzuoka, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors
2008 · Hiroshi Tsuji, Tsuyoshi Kuzuoka, et al. · Japanese Journal of Applied Physics · 11
Electron gun design for traveling wave tubes (TWTs) using a field emitter array (FEA) cathode
2002 · H. Imura, S. Tsuida, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Modeling of enhanced 1/ƒ noise in TFT with trap charges
2011 · T. Nakahagi, D. Sugiyama, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 10
Fully large-scale integration-process-compatible Si field emitter technology with high controllability of emitter height and sharpness
1997 · Hisashi Takemura, Naoya Furutake, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 9
0.5V image processor with 563 GOPS/W SIMD and 32bit CPU using high voltage clock distribution (HVCD) and adaptive frequency scaling (AFS) with 40nm CMOS
2013 · Masahiro Nomura, Akinori MURAMATSU, et al. · Symposium on VLSI Circuits · 8
An integrated poly‐Si TFT current data driver with a data‐line pre‐charge function
2003 · M. Shimoda, K. Abe, et al. · Journal of the Society for Information Display · 7
Si field emitter array with 90-nm-diameter gate holes
2002 · H. Takemura, M. Yoshiki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
High-Frequency Thin-Film Transistor Circuits for System Displays
2009 · Soichiro Miyano, Yoichi Kitagishi, et al. · Japanese Journal of Applied Physics · 4
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A field‐emitter‐array cathode‐ray tube (FEA‐CRT)
2000 · K. Konuma, Y. Okada, et al. · Journal of the Society for Information Display · 1
Novel field emitter array technology for subhalf-micron diameter gates
1999 · M. Yoshiki, N. Furutake, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1
A fully-LSI-process-compatible Si field emitter technology with high controllability of emitter height and sharpness
2002 · H. Takemura, N. Furutake, et al. · International Vacuum Nanoelectronics Conference
A novel field emitter array technology for sub-half-micron diameter gates
2002 · M. Yoshiki, N. Furutake, et al. · International Vacuum Nanoelectronics Conference
L2.5: Late-News Paper : Field-Emitter-Array Cathode-Ray Tube(2.主なFED関連発表内容)(FEA-CRT))(Report on 1999 SID International Symposium)
1999 · K. Konuma, Yasuhiro Okada, et al. · 映像情報メディア学会技術報告
L2.5: Late‐News Paper: Field‐Emitter Array Cathode‐Ray Tube (FEA‐CRT)
1999 · K. Konuma, Y. Okada, et al. · SID Symposium Digest of Technical Papers
Works count: 19
Citation count: 200
H-index: 9
I10-index: 8
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