Author

K. H. Bachem

Observed names: Bachem, K., Bachem, K.-H., Bachem, K.H., K H Bachem, K H. Bachem, K. -H. Bachem, K. Bachem, K. H. BACHEM, K. ‐H. Bachem, K.-H. BACHEM, K.-H. Bacchem, K.-H. Bachem, K.H Bachem, K.H. Bachem

Observed institutions: University of Freiburg, Tel Aviv University, Friedrich-Alexander-Universität Erlangen-Nürnberg, Paul Scherrer Institute, Fraunhofer Institute for Physical Measurement Techniques, Fraunhofer Institute for Applied Solid State Physics, IBM Research - Thomas J. Watson Research Center, Imperial College London, Fraunhofer-Gesellschaft, RWTH Aachen University

OpenAlex ID: A5025755862

Self-compensation in Mg doped p-type GaN grown by MOCVD

1998 · H Obloh, K.H Bachem, et al. · Journal of Crystal Growth · 145

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor

1997 · Y. Gobert, P.J. Tasker, et al. · IEEE Transactions on Microwave Theory and Techniques · 106

Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer-quantum well

1995 · M. Peter, K. Winkler, et al. · Applied Physics Letters · 88

Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition

1999 · M. Peter, N. Herres, et al. · Applied Physics Letters · 87

Resonant Raman scattering in GaN/(AlGa)N single quantum wells

1997 · D. Behr, R. Niebuhr, et al. · Applied Physics Letters · 73

Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

1997 · J.L. Rouvière, M. Arlery, et al. · Materials Science and Engineering B · 73

Compositional dependence of the elastic constants and the lattice parameter of AlxGa1−xAs

1999 · S. Gehrsitz, H. Sigg, et al. · Physical review. B, Condensed matter · 66

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Ionized donor bound excitons in GaN

1997 · B. Šantic, C. Merz, et al. · Applied Physics Letters · 65

Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire

1996 · J. L. Rouviere, M. Arlery, et al. · MRS Internet Journal of Nitride Semiconductor Research · 65

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Elastic constants and Poisson ratio in the system AlAs–GaAs

1995 · M. Krieger, H. Sigg, et al. · Applied Physics Letters · 62

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Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering

1998 · D. Behr, J. Wagner, et al. · Applied Physics Letters · 60

Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

1995 · R. Niebuhr, K. Bachem, et al. · Journal of Electronic Materials · 55

Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate

1999 · M. Peter, R. Kiefer, et al. · Applied Physics Letters · 48

Ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage

1992 · F. H. Eisen, K. Bachem, et al. · Journal of Applied Physics · 46

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

1997 · R. Niebuhr, K. H. Bachem, et al. · Journal of Electronic Materials · 39

Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers

1992 · J. Wagner, M. Maier, et al. · Physical review. B, Condensed matter · 38

GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results

1996 · B. Pereiaslavets, K.H. Bachem, et al. · IEEE Transactions on Electron Devices · 35

Low Pressure Vapor Phase Epitaxy of GaAs in a Halogen Transport System

1981 · N. Pütz, E. Veuhoff, et al. · Journal of The Electrochemical Society · 27

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Chemical transport reactions during crystal growth of PbTe and PbSe via vapour phase influenced by AgI

1992 · D. Stöber, B.O. Hildmann, et al. · Journal of Crystal Growth · 24

On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction

1987 · R. Rosman, A. Katzir, et al. · IEEE Journal of Quantum Electronics · 23

Sulfur incorporation in VPE GaAs

1981 · E. Veuhoff, M. Maier, et al. · Journal of Crystal Growth · 23

Spectroscopic ellipsometry characterization of (InGa)N on GaN

1998 · J. Wagner, A. Ramakrishnan, et al. · Applied Physics Letters · 21

Dynamics of the H- CAs complex in GaAs determined from Raman measurements

1995 · J. Wagner, K. H. Bachem, et al. · Physical review. B, Condensed matter · 21

77 K cw operation of distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe diode lasers

1986 · Y. Shani, A. Katzir, et al. · Applied Physics Letters · 21

High speed non-selfaligned GaInP/GaAs-TEBT

1992 · P. Zwicknagl, U. Schaper, et al. · Electronics Letters · 20

Works count: 146

Citation count: 1,768

H-index: 21

I10-index: 43