Get started
Author

V. M. Polyakov

Observed names: Polyakov, Vladimir M., V M Polyakov, V Polyakov, V. Polyakov, V.M Polyakov, V.M. Polyakov, Vladimir M. Polyakov, Vladimir Matveevich Polyakov, Vladimir Polyakov
ORCID: 0000-0001-6243-9391
Observed ORCID: 0000-0001-6243-9391
OpenAlex ID: A5025876232
Low-field electron mobility in wurtzite InN
2006 · V. M. Polyakov, F. Schwierz · Applied Physics Letters · 207
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
2005 · R. Granzner, V.M. Polyakov, et al. · Microelectronic Engineering · 107
Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions
2015 · C. Schreyvogel, V. Polyakov, et al. · Scientific Reports · 83
PDF
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
2020 · Stefano Leone, Roberto Fornari, et al. · Journal of Crystal Growth · 71
Formation of two-dimensional electron gases in polytypic SiC heterostructures
2005 · V. M. Polyakov, F. Schwierz · Journal of Applied Physics · 65
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
2003 · Ralf Granzner, V.M Polyakov, et al. · Physica E Low-dimensional Systems and Nanostructures · 60
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
2012 · M. Caesar, M. Dammann, et al. · IEEE International Reliability Physics Symposium proceedings · 49
An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs
2007 · R. Granzner, F. Schwierz, et al. · IEEE Transactions on Electron Devices · 49
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
2017 · Birte‐Julia Godejohann, Erdin Ture, et al. · physica status solidi (b) · 42
Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip
2017 · Beatrix Weiss, Richard Reiner, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 41
Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures
2009 · V. M. Polyakov, F. Schwierz, et al. · Journal of Applied Physics · 41
Low-field and high-field electron transport in zinc blende InN
2009 · V. M. Polyakov, F. Schwierz, et al. · Applied Physics Letters · 41
Reduced surface electron accumulation at InN films by ozone induced oxidation
2007 · V. Cimalla, V. Lebedev, et al. · Applied Physics Letters · 37
Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET
2001 · V.M. Polyakov, F. Schwierz · IEEE Transactions on Electron Devices · 34
Nonparabolicity effect on bulk transport properties in wurtzite InN
2006 · V. M. Polyakov, F. Schwierz · Journal of Applied Physics · 33
Monte Carlo calculation of two-dimensional electron gas mobility in InN-based heterostructures
2007 · V. M. Polyakov, F. Schwierz · Journal of Applied Physics · 30
Electronic effects of surface In atoms at clean and hydrogenated InP(100)4×2 surfaces
1994 · J. Woll, Th. Allinger, et al. · Surface Science · 29
Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces
1996 · F. Stietz, Th. Allinger, et al. · Applied Surface Science · 26
Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer
2015 · F. Benkhelifa, S. Muller, et al. · IEEE Electron Device Letters · 24
Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
2016 · Theresa Berthold, Julius Rombach, et al. · Journal of Applied Physics · 22
Influence of band structure and intrinsic carrier concentration on the THz surface emission from InN and InAs
2007 · V M Polyakov, F Schwierz · Semiconductor Science and Technology · 22
PDF
Adsorption and desorption of hydrogen at nonpolar GaN(11¯00) surfaces: Kinetics and impact on surface vibrational and electronic properties
2017 · L. Lymperakis, J. Neugebauer, et al. · Physical review. B./Physical review. B · 21
PDF
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
2012 · F Gütle, V M Polyakov, et al. · Semiconductor Science and Technology · 21
PDF
Effect of surface oxidation on electron transport in InN thin films
2007 · V. Lebedev, Ch. Y. Wang, et al. · Journal of Applied Physics · 21
Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures
2010 · V. M. Polyakov, V. Cimalla, et al. · Applied Physics Letters · 20
Works count: 86
Citation count: 1,619
H-index: 21
I10-index: 46
Year
Topic
Type