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Daniel Bauza

In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique
1997 · D. Bauza, Y. Maneglia · IEEE Transactions on Electron Devices · 82
Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method
1996 · Y. Maneglia, D. Bauza · Journal of Applied Physics · 78
Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures
1996 · D. Bauza, G. Ghibaudo · Solid-State Electronics · 58
Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies
2010 · F. Domengie, J. L. Regolini, et al. · Journal of Electronic Materials · 42
Improvement of RTS Noise in HgCdTe MWIR Detectors
2014 · Alexandre Brunner, Laurent Rubaldo, et al. · Journal of Electronic Materials · 40
Extraction of Si-SiO2 interface trap densities in MOS structures with ultrathin oxides
2002 · D. Bauza · IEEE Electron Device Letters · 34
Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal–oxide–semiconductor transistors
2003 · D. Bauza · Journal of Applied Physics · 27
On the Si–SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors
2004 · Y. Manéglia, F. Rahmoune, et al. · Journal of Applied Physics · 26
Impact on device performance and monitoring of a low dose of tungsten contamination by Dark Current Spectroscopy
2010 · F. Domengie, J. L. Regolini, et al. · IEEE International Reliability Physics Symposium proceedings · 25
Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
2009 · M. A. Negara, K. Cherkaoui, et al. · Journal of Applied Physics · 25
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Defects Study in Hg x Cd1−x Te Infrared Photodetectors by Deep Level Transient Spectroscopy
2014 · Laurent Rubaldo, Alexandre Brunner, et al. · Journal of Electronic Materials · 24
The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs
2007 · M.A. Negara, K. Cherkaoui, et al. · Microelectronic Engineering · 22
Effect of deep traps on the capacitance-voltage plots of Schottky barrier diodes: Application to the study of sputter-etched Ti-W/n-Si diodes
1993 · D. Bauza · Journal of Applied Physics · 21
Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes
2019 · P. Guinedor, A. Brunner, et al. · Journal of Electronic Materials · 18
A General and Reliable Model for Charge Pumping—Part I: Model and Basic Charge-Pumping Mechanisms
2008 · Daniel Bauza · IEEE Transactions on Electron Devices · 18
Modeling the dark current histogram induced by gold contamination in complementary-metal-oxide-semiconductor image sensors
2015 · F. Domengie, P. Morin, et al. · Journal of Applied Physics · 17
Near interface oxide trap capture kinetics in metal-oxide-semiconductor transistors: Modeling and measurements
1998 · D. Bauza · Journal of Applied Physics · 17
THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES
2001 · Daniel Bauza · Elsevier eBooks · 16
Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
2011 · Muhammad Adi Negara, Niti Goel, et al. · Microelectronic Engineering · 14
A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $\hbox{SiO}_{2}$ or in High- $\kappa$ Gate Stacks
2008 · Daniel Bauza · IEEE Transactions on Electron Devices · 11
On the SILC mechanism in MOSFET’s with ultrathin oxides
2004 · D. Bauza, F. Rahmoune, et al. · Microelectronics Reliability · 11
New model for the characterization of bulk traps by current deep level transient spectroscopy in metal-oxide-semiconductor transistors
1991 · D. Bauza, G. Ghibaudo · Journal of Applied Physics · 11
Defects in the interfacial layer of SiO2-HfO2 gate stacks: Depth distribution and indentification
2007 · O. Ghobar, D. Bauza, et al. · IEEE International Integrated Reliability Workshop final report · 10
Electrical properties of Si–SiO2 interface traps and evolution with oxide thickness in MOSFET’s with oxides from 2.3 to 1.2 nm thick
2003 · D. Bauza · Solid-State Electronics · 10
MOSFET parameter extraction from static, dynamic and transient current measurements
1994 · D. Bauza, G. Ghibaudo · Microelectronics Journal · 10
Works count: 94
Citation count: 787
H-index: 17
I10-index: 26
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