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Keisuke Ide
Observed names:
Ide, Keisuke,
K. IDE,
K. Ide,
Keisuke IDE
Institution:
MDX Research Center for Element Strategy
Observed institutions:
Tokyo Institute of Technology,
High Energy Accelerator Research Organization,
The Graduate University for Advanced Studies, SOKENDAI,
Institute of Materials Structure Science,
Materials & Structures Laboratory,
MDX Research Center for Element Strategy,
Imperial College London
show all 7
ORCID:
0000-0003-2197-6611
Observed ORCID:
0000-0003-2197-6611
OpenAlex ID:
A5032840979
Electronic Defects in Amorphous Oxide Semiconductors: A Review
2019
·
Keisuke Ide
, Kenji Nomura
, et al.
·
physica status solidi (a)
·
352
Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
2011
·
Keisuke Ide
, Yutomo Kikuchi
, et al.
·
Applied Physics Letters
·
263
Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor
2017
·
Junghwan Kim
, Takumi Sekiya
, et al.
·
NPG Asia Materials
·
128
PDF
Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
2012
·
Keisuke Ide
, Kenji Nomura
, et al.
·
Journal of Applied Physics
·
123
Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO3
2017
·
Christian A. Niedermeier
, Sneha Rhode
, et al.
·
Physical review. B./Physical review. B
·
65
PDF
Shallow Valence Band of Rutile GeO2 and P-type Doping
2020
·
Christian A. Niedermeier
, Keisuke Ide
, et al.
·
The Journal of Physical Chemistry C
·
62
PDF
Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors
2011
·
Keisuke Ide
, Yutomo Kikuchi
, et al.
·
Thin Solid Films
·
45
Multiple Roles of Hydrogen Treatments in Amorphous In–Ga–Zn–O Films
2017
·
Haochun Tang
, Yosuke Kishida
, et al.
·
ECS Journal of Solid State Science and Technology
·
41
PDF
Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films
2015
·
Haochun Tang
, Kyohei Ishikawa
, et al.
·
Journal of Applied Physics
·
41
Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen
2016
·
Christian A. Niedermeier
, Sneha Rhode
, et al.
·
Applied Physics Letters
·
35
Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3
2020
·
Christian A. Niedermeier
, Yu Kumagai
, et al.
·
Physical review. B./Physical review. B
·
33
PDF
SnS thin films prepared by H2S-free process and its p-type thin film transistor
2016
·
Fan-Yong Ran
, Zewen Xiao
, et al.
·
AIP Advances
·
31
Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity
2023
·
Xinyi He
, Seiya Nomoto
, et al.
·
Advanced Functional Materials
·
30
PDF
Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se
2022
·
Yusaku Nishimura
, Xinyi He
, et al.
·
Advanced Electronic Materials
·
27
Origins of the coloration from structure and valence state of bismuth oxide glasses
2021
·
Akira Saitoh
, Katsuki Hayashi
, et al.
·
Journal of Non-Crystalline Solids
·
27
Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution
2022
·
Xinyi He
, Haoyun Zhang
, et al.
·
Advanced Science
·
23
PDF
Breaking of Thermopower–Conductivity Trade‐Off in LaTiO3 Film around Mott Insulator to Metal Transition
2021
·
Takayoshi Katase
, Xinyi He
, et al.
·
Advanced Science
·
23
Double Charge Polarity Switching in Sb‐Doped SnSe with Switchable Substitution Sites
2020
·
Chihiro Yamamoto
, Xinyi He
, et al.
·
Advanced Functional Materials
·
23
Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide
2021
·
Takayoshi Katase
, Yudai Takahashi
, et al.
·
Science Advances
·
22
Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon
2019
·
K. M. Kojima
, M. Hiraishi
, et al.
·
Applied Physics Letters
·
22
PDF
Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors
2016
·
Haochun Tang
, Keisuke Ide
, et al.
·
Thin Solid Films
·
20
Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature
2018
·
Naoto Watanabe
, Keisuke Ide
, et al.
·
physica status solidi (a)
·
19
Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors
2017
·
Keisuke Ide
, Mitsuho Kikuchi
, et al.
·
Japanese Journal of Applied Physics
·
19
PDF
Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO 3 /LaNiO 3 /LaAlO 3 heterostructure
2021
·
Masatoshi Kimura
, Xinyi He
, et al.
·
Nano Letters
·
18
Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O
2016
·
Junghwan Kim
, Norihiko Miyokawa
, et al.
·
Thin Solid Films
·
18
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Works count:
132
Citation count:
1,694
H-index:
20
I10-index:
31
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