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P. Huguet
Observed names:
Huguet, P.,
PIERRE HUGUET,
Pierre Huguet
Institution:
United Monolithic Semiconductor (France)
Observed institutions:
Centre National de la Recherche Scientifique,
United Monolithic Semiconductor (France),
Université Pierre-et-Marie-Curie
OpenAlex ID:
A5033465007
Evaluation of P-HEMT MMIC technology PH25 for space applications
1999
·
P. Huguet
, P. Auxemery
, et al.
·
Microelectronics Reliability
·
4
Transition ordre-desordre dans le spinelle deficitaire Ga1,33Cr4S8
1983
·
Houria Ben Yaich
, Jean-Claude Jegaden
, et al.
·
Materials Research Bulletin
·
4
Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis
2003
·
N. Saysset-Malbert
, B. Lambert
, et al.
·
GaAs Reliability Workshop
·
3
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs
1999
·
N. Saysset-Malbert
, B. Lambert
, et al.
·
Microelectronics Reliability
·
3
Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime
2002
·
B. Lambert
, N. Malbert
, et al.
·
GaAs Reliability Workshop
·
2
Comparison of RF and DC life-test effects on GaAs power MESFETs
2000
·
B. Lambert
, N. Saysset-Malbert
, et al.
·
Microelectronics Reliability
·
2
Space Evaluation of P-HEMT MMIC Process PH15
2000
·
P. Huguet
, P. Auxemery
, et al.
·
ESASP
·
2
ESR in the two phases of the magnetic semiconductor GaCr4S 8
1983
·
P. Huguet
, G. Alquié
, et al.
·
Journal de Physique Lettres
·
2
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses
2001
·
B. Lambert
, N. Malbert
, et al.
·
Microelectronics Reliability
·
1
X-band high PAE MMIC HPA for space radar applications
1996
·
Decaesteke, Th.
, Villard, M.J
, et al.
·
AMS Acta (University of Bologna)
·
1
Influence of impact ionization stresses on AlGaAs-InGaAs HEMT performances
2002
·
B. Lambert
, N. Malbert
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Analysis of Lf Noise Evolution in Power Hemt After Dc Step Lifetests
2001
·
BENOÎT LAMBERT
, NATHALIE MALBERT
, et al.
·
International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF)
Influence of thermal and impact ionization stresses on AlGaAs/InGaAs HEMT DC performances
2001
·
Benoît Lambert
, Nathalie Malbert
, et al.
·
HAL
A Fully Implanted 1 W, 18 GHz FET
1985
·
Pierre Huguet
, Pierre Baudet
, et al.
·
European Microwave Conference (EuMC)
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Works count:
15
Citation count:
24
H-index:
3
I10-index:
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