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Hichem Ben Ammar
Observed names:
Ben ammar, Hichem,
Ben-Ammar, Hichem,
H. BEN AMMAR,
H. Ben Ammar,
Hichem Ben ammar,
Hichem Ben-Ammar
show all 6
Institutions:
Centre National de la Recherche Scientifique,
École Nationale Supérieure d'Ingénieurs de Caen,
Commissariat à l'Énergie Atomique et aux Énergies Alternatives,
Centre de Recherche sur les Ions, les Matériaux et la Photonique
Observed institutions:
Centre National de la Recherche Scientifique,
École Nationale Supérieure d'Ingénieurs de Caen,
Commissariat à l'Énergie Atomique et aux Énergies Alternatives,
Centre de Recherche sur les Ions, les Matériaux et la Photonique
ORCID:
0000-0002-3430-645X
Observed ORCID:
0000-0002-3430-645X
OpenAlex ID:
A5034400526
InAlGaN/GaN HEMTs at Cryogenic Temperatures
2016
·
Ezgi Dogmus
, Riad Kabouche
, et al.
·
Electronics
·
44
PDF
Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure
2016
·
H. Ben Ammar
, A. Minj
, et al.
·
physica status solidi (a)
·
11
The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template
2017
·
H. BEN AMMAR
, A. MINJ
, et al.
·
Journal of Microscopy
·
7
PDF
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy
2017
·
Albert Minj
, Hichem Ben Ammar
, et al.
·
physica status solidi (b)
·
3
Investigation of ternary ΑlΙnΝ and quaternary ΑlGaΙnΝ alloys for high electron mobility transistors by transmission electron microscopy
2017
·
Hichem Ben ammar
·
theses.fr (ABES)
·
1
PDF
Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
2016
·
Rzin, Mehdi
, Routoure, Jean-Marc
, et al.
·
HAL
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Works count:
7
Citation count:
66
H-index:
3
I10-index:
2
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