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Catherine Chaix

An optical characterization of defect levels induced by MBE growth of GaAs
1983 · J. P. Contour, G. Neu, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 51
High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy
2015 · Brian M. McSkimming, Catherine Chaix, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 36
High-power InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
2005 · A. Wilk, A.R. Kovsh, et al. · Journal of Crystal Growth · 34
Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h
2013 · Brian M. McSkimming, F. Wu, et al. · Journal of Crystal Growth · 30
Extreme voltage recovery in GaAs:Ti intermediate band solar cells
2012 · P.G. Linares, A. Martí, et al. · Solar Energy Materials and Solar Cells · 29
Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy
2014 · Hironori Okumura, Brian M. McSkimming, et al. · Applied Physics Letters · 25
Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE
2006 · Y. Cordier, F. Semond, et al. · Journal of Crystal Growth · 21
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
2018 · Samuel Matta, Julien Brault, et al. · Journal of Crystal Growth · 20
Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
2006 · Y. Cordier, F. Pruvost, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 19
Heterogeneous precipitation of the ω phase in a β titanium alloy
1981 · A. Lasalmonie, C. Chaix · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 14
Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
2012 · Yvon Cordier, Franck Natali, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 11
IBPOWER: Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost
2009 · A. Marti, E. Antolin, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 11
Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
2008 · F. Natali, Y. Cordier, et al. · Journal of Crystal Growth · 10
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
2015 · Yvon Cordier, Benjamin Damilano, et al. · Journal of Crystal Growth · 9
Optical bistability in hybrid AlAs/GaAs Bragg reflectors
1993 · Steffen Knigge, Stefan Zumkley, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Experiments on optoelectronic bistability in distributed AIAs/GaAs-Bragg reflectors
1992 · S. Knigge, S. Zumkley, et al. · Microelectronic Engineering · 5
(GaAl)As Tuneel junctions grown by molecular beam epitaxy: Intercell ohmic contacts for multiple-band-gap solar cells
1984 · J.P. Contour, A. M'Baye, et al. · Solar Cells · 5
The structure of silicon rich precipitates in Ti-30V-xSi alloys—influence of the precipitation on the mechanical properties
1980 · C Chaix, C Diot, et al. · Acta Metallurgica · 5
Deformation at High Temperature of Ti-V and Ti-V-Si BCC Alloys
1979 · C. Chaix, A. Lasalmonie, et al. · Elsevier eBooks · 3
Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
2004 · A. Wilk, M. Zaknoune, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2
Modulation spectroscopy of the complex photoluminescence band of Ga0.7 Al0.3 As:Si
1991 · B. Gil, M. Leroux, et al. · Physical review. B, Condensed matter · 2
Nonlinear hybrid AlAs/GaAs Bragg reflectors for photonic switching applications
1994 · Steffen Knigge, H. Pint, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Quantum Dot based UV Light Emitting Diodes
2017 · Brault, Julien, Matta, Samuel, et al. · HAL
Multi-4 in. production MBE system review for the growth of mixed P-based heterostructures, for optoelectronic applications
2005 · A. Wilk, S. Godey, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications
2003 · A. Wilk, S. Godey, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Works count: 26
Citation count: 349
H-index: 11
I10-index: 13
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