Get started
Author

Dale C. Jacobson

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
1997 · P. A. Stolk, H.-J. Gossmann, et al. · Journal of Applied Physics · 634
Surface Modification and Alloying
1983 · J. M. Poate, G. Foti, et al. · Springer eBooks · 611
Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
1984 · Michael O. Thompson, G. J. Galvin, et al. · Physical Review Letters · 569
Equilibrium shape of Si
1993 · D. J. Eaglesham, A. E. White, et al. · Physical Review Letters · 509
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon
1991 · J. Michel, J. L. Benton, et al. · Journal of Applied Physics · 420
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation
1985 · E. P. Donovan, F. Spaepen, et al. · Journal of Applied Physics · 418
Structural relaxation and defect annihilation in pure amorphous silicon
1991 · S. Roorda, W. C. Sinke, et al. · Physical review. B, Condensed matter · 411
Heat of crystallization and melting point of amorphous silicon
1983 · E. P. Donovan, F. Spaepen, et al. · Applied Physics Letters · 339
Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode
1994 · B. Zheng, J. Michel, et al. · Applied Physics Letters · 334
On the mechanism of the hydrogen-induced exfoliation of silicon
1997 · M. K. Weldon, V. E. Marsico, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 318
Density of amorphous Si
1994 · J. S. Custer, Michael O. Thompson, et al. · Applied Physics Letters · 292
Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation
1983 · Michael O. Thompson, J. W. Mayer, et al. · Physical Review Letters · 263
Local structure of 1.54-μm-luminescence Er3+ implanted in Si
1992 · D. L. Adler, D. C. Jacobson, et al. · Applied Physics Letters · 249
Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation
1993 · D. J. Eaglesham, F. C. Unterwald, et al. · Physical Review Letters · 224
Epitaxial silicides
1982 · R.T. Tung, J.M. Poate, et al. · Thin Solid Films · 216
Growth of single-crystal CoSi2 on Si(111)
1982 · R. T. Tung, J. C. Bean, et al. · Applied Physics Letters · 203
Controlled atomic spontaneous emission from Er3+ in a transparent Si/ SiO2 microcavity
1993 · A. M. Vredenberg, N. E. J. Hunt, et al. · Physical Review Letters · 187
Optical doping of waveguide materials by MeV Er implantation
1991 · A. Polman, D. C. Jacobson, et al. · Journal of Applied Physics · 183
Electron field emission from ion-implanted diamond
1995 · W. Zhu, G. P. Kochanski, et al. · Applied Physics Letters · 175
Microstructure of erbium-implanted Si
1991 · D. J. Eaglesham, J. Michel, et al. · Applied Physics Letters · 157
The electrical and defect properties of erbium-implanted silicon
1991 · J. L. Benton, J. Michel, et al. · Journal of Applied Physics · 133
A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
1985 · T.E. Seidel, D.J. Lischner, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 126
Determination of diffusion mechanisms in amorphous silicon
1992 · S. Coffa, J. M. Poate, et al. · Physical review. B, Condensed matter · 125
Trap-limited interstitial diffusion and enhanced boron clustering in silicon
1995 · P. A. Stolk, H.-J. Gossmann, et al. · Applied Physics Letters · 123
A model for pulsed laser melting of graphite
1985 · J. Steinbeck, G. Braunstein, et al. · Journal of Applied Physics · 119
Works count: 278
Citation count: 12,100
H-index: 51
I10-index: 142
Year
Topic
Type