Author

Kumiko Konishi

Observed institutions: SAGA Light Source, Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya University, Hitachi (Japan)

ORCID: 0000-0002-9737-2948

Observed ORCID: 0000-0002-9737-2948

OpenAlex ID: A5041985159

Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs

2019 · Takashi Ishigaki, Tatsunori Murata, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 55

Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area

2018 · Ryusei Fujita, Kazuki Tani, et al. · IEEE Transactions on Electron Devices · 25

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Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs

2018 · Kumiko Konishi, Ryusei Fujita, et al. · Semiconductor Science and Technology · 23

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Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes

2017 · Hiroyuki Okino, Norifumi Kameshiro, et al. · Journal of Applied Physics · 21

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET

2017 · Kumiko Konishi, Ryusei Fujita, et al. · Materials science forum · 21

Advanced X-ray imaging at beamline 07 of the SAGA Light Source

2021 · Akio Yoneyama, Satoshi Takeya, et al. · Journal of Synchrotron Radiation · 20

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Modeling and Evaluation of Stacking Fault Expansion Velocity in Body Diodes of 3.3 kV SiC MOSFET

2019 · Kumiko Konishi, Ryusei Fujita, et al. · Journal of Electronic Materials · 17

Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs

2022 · Kumiko Konishi, Ryusei Fujita, et al. · AIP Advances · 15

In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

2021 · Kumiko Konishi, Ryusei Fujita, et al. · Journal of Applied Physics · 14

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

2017 · Kumiko Konishi, Norifumi Kameshiro, et al. · Japanese Journal of Applied Physics · 14

Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

2015 · Naoki Tega, Hiroyuki Yoshimoto, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13

Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam

2023 · Akio Yoneyama, Kotaro Ishiji, et al. · Scientific Reports · 12

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Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET

2018 · Kumiko Konishi, Ryusei Fujita, et al. · Materials science forum · 12

Expansion of beam width in exposure and crystal structure beamline (BL09) of SAGA-LS and applications using expanded beams

2022 · Kotaro Ishiji, Kazuya Kobayashi, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 9

A 3.3 kV / 800 A Ultra-High Power Density SiC Power Module

2018 · Takashi Ishigaki, Seiichi Hayakawa, et al. · 9

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 · Hiroyuki Okino, Norifumi Kameshiro, et al. · Materials science forum · 9

3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

2017 · Akio Shima, Haruka Shimizu, et al. · Materials science forum · 6

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

2017 · Yuan Bu, Hiroyuki Yoshimoto, et al. · Materials science forum · 6

Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes

2015 · Kumiko Konishi, Norifumi Kameshiro, et al. · Materials science forum · 4

Non-destructive detection of sub-micrometer-sized micropipes in silicon carbide using mirror electron microscope

2023 · Keisuke Kobayashi, Yuki Mori, et al. · Journal of Applied Physics · 3