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Leonid E. Vorobjev

Observed names: L E Vorobjev, L Vorobjev, L. E. VOROBJEV, L. E. Vorobjev, L.E Vorobjev, L.E. Vorobjev, Leonid E Vorobjev, Leonid Vorobjev, Vorobjev, L. E.
Observed institutions: Peter the Great St. Petersburg Polytechnic University, University of Virginia, University of Bayreuth, University of Regensburg, Lithuanian Academy of Sciences, Ioffe Institute, St. Petersburg State Technological Institute
OpenAlex ID: A5042829117
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
2009 · Dmitry Donetsky, Stefan P. Svensson, et al. · Applied Physics Letters · 146
Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells
2000 · S. D. Ganichev, H. Ketterl, et al. · Applied Physics Letters · 100
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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
2019 · V. A. Shalygin, M. D. Moldavskaya, et al. · Journal of Applied Physics · 43
Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment
2019 · Hayk A. Sarkisyan, David B. Hayrapetyan, et al. · Nanomaterials · 29
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Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field
2009 · V. A. Shalygin, L. E. Vorobjev, et al. · Journal of Applied Physics · 27
Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field
2011 · V. A. Shalygin, L. E. Vorobjev, et al. · Journal of Applied Physics · 26
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm
2016 · A. V. Babichev, A. Bousseksou, et al. · Semiconductors · 25
Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation
2016 · G. A. Melentev, V. A. Shalygin, et al. · Journal of Applied Physics · 25
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Terahertz luminescence in strained GaAsN:Be layers under strong electric fields
2007 · V. A. Shalygin, L. E. Vorobjev, et al. · Applied Physics Letters · 22
Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping
2015 · A. Yu. Egorov, A. V. Babichev, et al. · Semiconductors · 21
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
2015 · D. A. Firsov, L. E. Vorobjev, et al. · Semiconductors · 19
The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells
2017 · I.S. Makhov, V.Yu. Panevin, et al. · Superlattices and Microstructures · 17
Continuous wave operated 3.2 µm type-I quantum-well diode lasers with the quinary waveguide layer
2009 · G Belenky, L Shterengas, et al. · Semiconductor Science and Technology · 17
A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots
2001 · A. Kastalsky, L.E. Vorobjev, et al. · IEEE Journal of Quantum Electronics · 16
Optical Spin Orientation Under Inter- and Intra-Subband Transitions in QWs
2003 · S. A. Tarasenko, E. L. Ivchenko, et al. · Journal of Superconductivity · 15
Lateral photoconductivity in structures with Ge/Si quantum dots
2013 · V. Yu. Panevin, A. N. Sofronov, et al. · Semiconductors · 14
Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission
2019 · I.S. Makhov, V.Yu. Panevin, et al. · Journal of Luminescence · 13
Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots
2015 · A.N. Sofronov, L.E. Vorobjev, et al. · Superlattices and Microstructures · 13
Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
2010 · D. A. Firsov, V. A. Shalygin, et al. · Semiconductors · 13
Far-infrared spectra of reflectivity, transmission and hot-hole emission in p-doped multiple quantum wells
1996 · S Farjami Shayesteh, T Dumelow, et al. · Semiconductor Science and Technology · 13
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Toward far- and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems
2001 · Vladimir Y. Aleshkin, Alexander A. Andronov, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
2018 · A. N. Sofronov, R. M. Balagula, et al. · Semiconductors · 11
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields
2016 · R. M. Balagula, M. Ya. Vinnichenko, et al. · Semiconductors · 11
Plasmon phonon modes and optical resonances inn-GaN
2016 · G A Melentev, D Yu Yaichnikov, et al. · Journal of Physics Conference Series · 11
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Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells
2015 · D. A. Firsov, L. E. Vorobjev, et al. · Semiconductors · 11
Works count: 185
Citation count: 971
H-index: 15
I10-index: 33
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