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Tomohito Tsushima

19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology
2014 · Richard Fackenthal, Makoto Kitagawa, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 227
A Novel Resistance Memory with High Scalability and Nanosecond Switching
2007 · K. Aratani, K. Ohba, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 149
A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput
2011 · Wataru Otsuka, Koji Miyata, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 79
Cross Point Cu-ReRAM with BC-Doped Selector
2018 · Kazuhiro Ohba, Shuichiro Yasuda, et al. · IEEE International Memory Workshop (IMW) · 10
Evolution of Transceiver Architectures toward Software-Defined and Cognitive Radios
2010 · T. Tsukahara, T. Tsushima, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
ReRAM Test Macro with High Speed Read/Program Circuit -- Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput
2011 · Keiichi Tsutsui, Wataru Otsuka, et al. · IEICE Technical Report; IEICE Tech. Rep.
GHz Clock Distribution Using Transmission Line Interconnect and CMOS Differential Driver Circuit in Si ULSI
2001 · Yoshisato Yokoyama, Tomohito Tsushima, et al. · International Conference on Solid State Devices and Materials (SSDM)
Interconnect Length Distribution in Si System ULSI
2001 · Naohiro Takagi, Hiyouko Shinoki, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 9
Citation count: 466
H-index: 4
I10-index: 4
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