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Christelle Le Cam

Observed names: C. Le Cam, C. LeCam, Le Cam, Christelle
Institution: NXP (Germany)
OpenAlex ID: A5043172016
Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge
2007 · P. Goarin, G.E.J. Koops, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 100
A Cost-Effective Low Power Platform for the 45-nm Technology Node
2006 · E. Josse, S. Parihar, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
A Low Cost Drive Current Enhancement Technique Using Shallow Trench Isolation Induced Stress for 45-nm Node
2006 · C. Le Cam, F. Guyader, et al. · Symposium on VLSI Technology · 16
Power Trench MOSFETs with very low specific on-resistance for 25V applications
2007 · Pierre Goarin, Rob van Dalen, et al. · Solid-State Electronics · 10
Power trench MOSFETs with very low specific on-resistance for 25V applications
2006 · Pierre Goarin, Rob van Dalen, et al. · European Solid-State Device Research Conference · 5
Application-based Modeling of I/O Reliability
2025 · M. D. Shroff, J. Satasia, et al. · IEEE International Reliability Physics Symposium proceedings · 1
ISPSD '07 Charitat Award; Split-Gate Resurf Stepped Oxide (RSO) MOSFETS for 25V Applications with Record Low Gate-to-Drain Charge
2008 · P. Goarin, G. E. J. Koops, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1
Works count: 8
Citation count: 170
H-index: 5
I10-index: 4
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